TP86R203NL~6LQ
Toshiba Semiconductor TP86R203NL,LQ
MPNTP86R203NL,LQ
End of Life
MOSFET N CH 30V 19A 8SOP
$0.9Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSRoHS Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 19A (Ta) |
| Power dissipation | 1W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.3V @ 200µA |
| Rds on (Max) @ id, vgs | 6.2mOhm @ 9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1400 pF @ 15 V |