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Toshiba Semiconductor TMBT3904,LM — Memory (DRAM / SRAM / Flash / EEPROM)
Toshiba Semiconductor

TMBT3904,LM NPN Transistor, 50V 150mA 300MHz SOT-23-3

MPNTMBT3904,LM
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Toshiba TMBT3904,LM NPN transistor, 50 V collector-emitter breakdown, 150 mA collector current, 300 MHz transition frequency, SOT-23-3 surface-mount package, 320 mW power dissipation.

$0.18Ref. price · indicative, final on quote
TMBT3904,LM datasheet
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
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Specifications

TMBT3904,LM Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN
Voltage - collector emitter breakdown50 V
Current - collector (Ic)150 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 10mA, 1V
Power - max320 mW
Frequency300MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic300mV @ 5mA, 50mA

Product details

300 MHz NPN switch in SOT-23-3

The TMBT3904,LM from Toshiba is a general-purpose NPN switching transistor in the industry-standard SOT-23-3 package. It is rated for a collector-emitter breakdown of 50 V and a continuous collector current of 150 mA, with a transition frequency of 300 MHz — suitable for low-to-medium speed switching, level translation, and signal amplification in compact surface-mount designs.

Saturation voltage and DC gain at typical bias

At a base drive of 5 mA and collector current of 50 mA, the Vce(sat) maximum is 300 mV — a clean saturation voltage that keeps on-state dissipation low in switching loads.

Frequently asked questions

Is TMBT3904 equivalent to 2N3904?

The TMBT3904,LM is the SOT-23 surface-mount version of the classic 2N3904 NPN transistor. It shares the same electrical ratings — 50 V Vce, 150 mA Ic, 300 MHz ft — in a smaller, surface-mount package for modern PCB assembly.