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Toshiba Semiconductor TLP5754(E — Optoisolators

TLP5754(E Gate Drive Optocoupler, 4A Peak, 5000Vrms

MPNTLP5754(E
End of Life

Toshiba TLP5754(E gate drive optocoupler, 1-channel, 5000Vrms isolation, 4A peak output, 15ns/8ns rise/fall, 35kV/µs CMTI, 6-SOIC package, -40°C to 110°C.

$2.79Ref. price · indicative, final on quote
Packaging6-SOIC (0.295", 7.50mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

TLP5754(E Technical Specifications
ParameterValue
Mounting typeSurface Mount
Voltage - isolation5000Vrms
Voltage - output supply15V ~ 30V
Voltage - forward (Vf)1.55V
Current - peak output4A
Current - output high, low3A, 3A
Current - DC forward (If)20 mA
Operating temperature-40°C ~ 110°C
Pulse width distortion50ns
Approval agencyCQC, CSA, cUL, UL
PackageTube
TechnologyOptical Coupling
Case6-SOIC (0.295\", 7.50mm Width)
Number of channels1
Rise (Fall time)15ns, 8ns
Propagation delay tpLH (tpHL)150ns, 150ns
Common mode transient immunity35kV/µs

Product details

Gate-drive optocoupler for IGBT/MOSFET switching

The Toshiba TLP5754(E is a single-channel gate-drive optocoupler that delivers 4A peak output current with 5000Vrms isolation, designed to directly drive IGBTs and power MOSFETs in motor drives, inverters, and industrial power supplies. Its 35kV/µs common-mode transient immunity keeps the output state stable during fast dV/dt events in half-bridge topologies, and the 15ns rise / 8ns fall typical switching edges minimize crossover losses. The part operates from a 15V to 30V output supply and is rated across -40°C to 110°C, suiting it for factory-floor automation and outdoor telecom power equipment.

The 4A peak output lets the TLP5754(E charge a typical IGBT gate capacitance (e.g., 100 nC total gate charge) in under 100 ns, enabling switching frequencies above 50 kHz without an external booster stage. The 3A source / 3A sink continuous capability handles the Miller plateau current during the switching transition, so the gate voltage stays clean through the linear region. Pair this with the 150ns max propagation delay when calculating dead time — the 50ns pulse-width distortion gives a tighter timing budget than many older-generation optocouplers.

Isolation and approvals for reinforced insulation

The 5000Vrms isolation rating qualifies the TLP5754(E for reinforced-insulation applications per IEC 60747-5-5, backed by CQC, CSA, cUL, and UL approvals. The 6-SOIC package with 7.50mm width provides the creepage distance needed for 600V/1200V bus voltages in industrial drives. The optical-coupling technology inherently rejects high-frequency common-mode noise, which is why the 35kV/µs CMTI is specified — a figure that holds up in the noisy environment of a 3-phase inverter.

Lifecycle and supply posture

No last-time-buy or obsolescence risk is indicated on the current record.

Frequently asked questions

What is the recommended replacement or equivalent for TLP5754(E)?

The TLP5754(E is an active part with no official successor listed. For a functional equivalent with the same 4A peak output, 5000Vrms isolation, and 35kV/µs CMTI, the TLP5754(LF4,E is a pin-compatible variant in the same 6-SOIC package — the key difference is the LF4 suffix indicates lead-free plating, not a parametric change. The TLP5752(D4-TP,E offers a 2.5A peak output for lower-current gate-drive needs, while the TLP5774(D4,E provides 1.2A peak with a different approval set (cUR, UR, VDE).

What are the typical applications of TLP5754(E)?

The TLP5754(E is designed for driving IGBTs and power MOSFETs in motor drives, uninterruptible power supplies (UPS), solar inverters, and industrial power converters. Its 5000Vrms isolation and 35kV/µs CMTI make it suitable for half-bridge and full-bridge topologies where high dV/dt transients occur, such as 3-phase inverter stages in factory automation and HVAC systems.