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Toshiba Semiconductor TLP151A(TPR,E) — Optoisolators

TLP151A(TPR,E) Optocoupler Gate Driver, 600mA Peak, 3750Vrms

MPNTLP151A(TPR,E)
End of Life

Toshiba TLP151A(TPR,E) 1-channel optical coupling gate driver, 600mA peak output, 3750Vrms isolation, 50ns rise/fall typ, 20kV/µs CMTI, 10V-30V output supply, -40°C to 110°C, 6-SOIC-5 surface mount.

$1.59Ref. price · indicative, final on quote
Packaging6-SOIC (0.179", 4.55mm Width), 5 Leads
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

TLP151A(TPR,E) Technical Specifications
ParameterValue
Mounting typeSurface Mount
Voltage - isolation3750Vrms
Voltage - output supply10V ~ 30V
Voltage - forward (Vf)1.55V
Current - peak output600mA
Current - output high, low400mA, 400mA
Current - DC forward (If)25 mA
Operating temperature-40°C ~ 110°C
Pulse width distortion350ns
Approval agencycUL, UL
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyOptical Coupling
Case6-SOIC (0.179\", 4.55mm Width), 5 Leads
Number of channels1
Rise (Fall time)50ns, 50ns
Propagation delay tpLH (tpHL)500ns, 500ns
Common mode transient immunity20kV/µs

Product details

Gate-drive optocoupler for IGBTs and power MOSFETs

The Toshiba TLP151A(TPR,E) is a single-channel optical coupling gate driver in a 6-SOIC-5 surface-mount package. It delivers 600mA peak output current with 3750Vrms isolation, making it a fit for driving IGBTs and power MOSFETs in motor drives, inverters, and industrial power supplies. The 50ns typical rise and fall times support switching frequencies where dead-time margins are tight, and the 20kV/µs common-mode transient immunity keeps the output state clean under fast dv/dt from the power stage. The output supply range of 10V to 30V covers standard gate-drive voltages for medium-voltage IGBT modules and logic-level MOSFETs.

Peak current and switching speed — what drives the BOM decision

The 600mA peak output dictates which gate charge can be switched within the 50ns rise/fall window. For a typical IGBT with 100 nC gate charge, this driver can charge the gate in roughly 170 ns — enough for 50-100 kHz switching in a motor drive. The 400mA high/low source-sink capability is the continuous rating; the peak figure handles the initial gate-charge surge. If your design needs to drive a larger module (e.g., 300 nC gate charge), the TLP352(TP1,F) with 2.5A peak output is the next tier up in the same 6-SOIC footprint. Propagation delay is 500ns max with 350ns pulse-width distortion. That 350ns skew between turn-on and turn-off sets a lower bound on the dead-time you must program in the controller — budget at least 400ns dead-time to avoid shoot-through. The 50ns rise/fall symmetry helps keep the dead-time budget balanced across temperature.

Isolation and transient immunity for noisy environments

Rated at 3750Vrms isolation with cUL and UL approval, the TLP151A meets basic isolation requirements for motor-drive and power-supply applications where reinforced isolation is not mandated. The 20kV/µs common-mode transient immunity is the key spec for inverter legs: when the high-side IGBT switches, the floating ground can slew at several kV/µs, and a driver with lower CMTI would glitch the gate signal. This part holds its output state through that transient, avoiding false turn-on.

Lifecycle and sourcing posture

No immediate allocation risk flagged, but the gate-driver market has seen lead-time stretches in past cycles — worth locking in a forecast if volume ramps.

Frequently asked questions

Can TLP151A(TPR,E) be used to drive GaN FETs?

The TLP151A(TPR,E) is an optical coupling gate driver with 600mA peak output and 50ns rise/fall times. GaN FETs typically require lower gate charge and faster edge rates (sub-10ns) than this part provides, so it is not the best fit for GaN. It is better suited for IGBTs and silicon power MOSFETs where the 50ns edges and 600mA peak are adequate.

Is TLP151A(TPR,E) compatible with 5V logic?

The input side uses a standard infrared LED with a typical forward voltage of 1.55V and a maximum forward current of 25 mA. A 5V logic output can drive the LED through a series resistor — no level translation needed. The output supply range of 10V to 30V is independent of the input logic level.