TK9J90E,S1E
Toshiba Semiconductor
MOSFET N-CH 900V 9A TO3P
[IN STOCK] In Stock: 1,299 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Ta) |
| Power dissipation | 250W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ id | 4V @ 900µA |
| Rds on (Max) @ id, vgs | 1.3Ohm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 46 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 25 V |
TK9J90E,S1E
[ALLOC] verified