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Toshiba Semiconductor TK7S10N1Z,LQ

Toshiba Semiconductor TK7S10N1Z,LQ

MPNTK7S10N1Z,LQ
End of Life

MOSFET N-CH 100V 7A DPAK

$1.43Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TK7S10N1Z,LQ specifications
ParameterValue
SeriesU-MOSVIII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Ta)
Power dissipation50W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs48mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs7.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds470 pF @ 10 V