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Toshiba Semiconductor TK7P65W,RQ

Toshiba Semiconductor TK7P65W,RQ

MPNTK7P65W,RQ
End of Life

MOSFET N-CH 650V 6.8A DPAK

$1.56Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesDTMOSIV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TK7P65W,RQ specifications
ParameterValue
SeriesDTMOSIV
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.8A (Ta)
Power dissipation60W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 250µA
Rds on (Max) @ id, vgs800mOhm @ 3.4A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds490 pF @ 300 V