TK6P60W,RVQ - Toshiba Semiconductor
MPNTK6P60W,RVQ
End of Life
MOSFET N CH 600V 6.2A DPAK
$1.93Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesDTMOSIV
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | DTMOSIV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.2A (Ta) |
| Power dissipation | 60W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.7V @ 310µA |
| Rds on (Max) @ id, vgs | 820mOhm @ 3.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 390 pF @ 300 V |