TK65E10N1,S1X
Toshiba Semiconductor · U-MOSVIII-H Series
MOSFET N CH 100V 148A TO220
[IN STOCK] In Stock: 24 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 148A (Ta) |
| Power dissipation | 192W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 4.8mOhm @ 32.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 81 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5400 pF @ 50 V |
TK65E10N1,S1X
[ALLOC] verified