Toshiba Semiconductor TK62N60X,S1F
MPNTK62N60X,S1F
End of Life
MOSFET N-CH 600V 61.8A TO247
$11.26Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesDTMOSIV-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | DTMOSIV-H |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 61.8A (Ta) |
| Power dissipation | 400W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.5V @ 3.1mA |
| Rds on (Max) @ id, vgs | 40mOhm @ 21A, 10V |
| Gate charge (Qg) (Max) @ vgs | 135 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6500 pF @ 300 V |