Toshiba Semiconductor TK60F10N1L,LXGQ
MPNTK60F10N1L,LXGQ
End of Life
MOSFET N-CH 100V 60A TO220SM
$2.32Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Ta) |
| Power dissipation | 205W (Tc) |
| Operating temperature | 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.5V @ 500µA |
| Rds on (Max) @ id, vgs | 6.11mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4320 pF @ 10 V |