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Toshiba Semiconductor TK5R1P08QM,RQ

Toshiba Semiconductor TK5R1P08QM,RQ

MPNTK5R1P08QM,RQ
End of Life

UMOS10 DPAK 80V 5.1MOHM

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$2.75 / ea

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$2.40 / ea from 10 pcs

PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesU-MOSX-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

TK5R1P08QM,RQ specifications
ParameterValue
SeriesU-MOSX-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C84A (Tc)
Power dissipation104W (Tc)
Operating temperature175°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 700µA
Rds on (Max) @ id, vgs5.1mOhm @ 42A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3980 pF @ 40 V