TK39N60W5,S1VF
Toshiba Semiconductor · DTMOSIV Series
MOSFET N-CH 600V 38.8A TO247
[IN STOCK] In Stock: 4,432 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | DTMOSIV |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 38.8A (Ta) |
| Power dissipation | 270W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.5V @ 1.9mA |
| Rds on (Max) @ id, vgs | 74mOhm @ 19.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 135 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4100 pF @ 300 V |
TK39N60W5,S1VF
[ALLOC] verified