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Toshiba Semiconductor TK39N60W5,S1VF

Toshiba Semiconductor TK39N60W5,S1VF

MPNTK39N60W5,S1VF
End of Life

MOSFET N-CH 600V 38.8A TO247

$8.92Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesDTMOSIV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TK39N60W5,S1VF specifications
ParameterValue
SeriesDTMOSIV
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C38.8A (Ta)
Power dissipation270W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 1.9mA
Rds on (Max) @ id, vgs74mOhm @ 19.4A, 10V
Gate charge (Qg) (Max) @ vgs135 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4100 pF @ 300 V