TK32A12N1,S4X
Toshiba Semiconductor · U-MOSVIII-H Series
MOSFET N-CH 120V 32A TO220SIS
[IN STOCK] In Stock: 18 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 120 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 32A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 500µA |
| Rds on (Max) @ id, vgs | 13.8mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 60 V |
TK32A12N1,S4X
[ALLOC] verified