Toshiba Semiconductor TK31V60W,LVQ
MPNTK31V60W,LVQ
End of Life
MOSFET N-CH 600V 30.8A 4DFN
$8.73Ref. price · indicative, final on quote
Packaging4-VSFN Exposed Pad
RoHSROHS3 Compliant
SeriesDTMOSIV
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | DTMOSIV |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 30.8A (Ta) |
| Power dissipation | 240W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-VSFN Exposed Pad |
| Vgs(th) (Max) @ id | 3.7V @ 1.5mA |
| Rds on (Max) @ id, vgs | 98mOhm @ 15.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 86 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3000 pF @ 300 V |