Skip to main content
Toshiba Semiconductor TK2Q60D(Q)

Toshiba Semiconductor TK2Q60D(Q)

MPNTK2Q60D(Q)
End of Life

MOSFET N-CH 600V 2A PW-MOLD2

$0.91Ref. price · indicative, final on quote
PackagingTO-251-3 Stub Leads, IPak
RoHSROHS3 Compliant
Seriesπ-MOSVII
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TK2Q60D(Q) specifications
ParameterValue
Seriesπ-MOSVII
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation60W (Tc)
Operating temperature150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Stub Leads, IPak
Vgs(th) (Max) @ id4.4V @ 1mA
Rds on (Max) @ id, vgs4.3Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds280 pF @ 25 V