Toshiba Semiconductor TK1R4S04PB,LXHQ
MPNTK1R4S04PB,LXHQ
End of Life
MOSFET N-CH 40V 120A DPAK
$1.88Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesU-MOSIX-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIX-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Ta) |
| Power dissipation | 180W (Tc) |
| Operating temperature | 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3V @ 500µA |
| Rds on (Max) @ id, vgs | 1.9mOhm @ 60A, 6V |
| Gate charge (Qg) (Max) @ vgs | 103 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5500 pF @ 10 V |