TK1R4F04PB,LXGQ - Toshiba Semiconductor
MPNTK1R4F04PB,LXGQ
End of Life
MOSFET N-CH 40V 160A TO220SM
$2.73Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SeriesU-MOSIX-H
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIX-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 160A (Ta) |
| Power dissipation | 205W (Tc) |
| Operating temperature | 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3V @ 500µA |
| Rds on (Max) @ id, vgs | 1.9mOhm @ 80A, 6V |
| Gate charge (Qg) (Max) @ vgs | 103 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5500 pF @ 10 V |