Toshiba Semiconductor TK125V65Z,LQ
MPNTK125V65Z,LQ
End of Life
MOSFET N-CH 650V 24A 5DFN
$4.9Ref. price · indicative, final on quote
Packaging4-VSFN Exposed Pad
RoHSROHS3 Compliant
SeriesDTMOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | DTMOSVI |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 24A (Ta) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-VSFN Exposed Pad |
| Vgs(th) (Max) @ id | 4V @ 1.02mA |
| Rds on (Max) @ id, vgs | 125mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2250 pF @ 300 V |