Toshiba Semiconductor TK110E65Z,S1X
MPNTK110E65Z,S1X
End of Life
650V DTMOS VI TO-220 110MOHM
$4.31Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 24A (Ta) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 1.02mA |
| Rds on (Max) @ id, vgs | 110mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2250 pF @ 300 V |