TK10A80E,S4X - Toshiba Semiconductor
MPNTK10A80E,S4X
End of Life
MOSFET N-CH 800V 10A TO220SIS
$2.32Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Seriesπ-MOSVIII
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | π-MOSVIII |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Power dissipation | 50W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 1Ohm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 46 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 25 V |