Toshiba Semiconductor TK100L60W,VQ
MPNTK100L60W,VQ
End of Life
MOSFET N-CH 600V 100A TO3P
$33.45Ref. price · indicative, final on quote
PackagingTO-3PL
RoHSROHS3 Compliant
SeriesDTMOSIV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | DTMOSIV |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Ta) |
| Power dissipation | 797W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-3PL |
| Vgs(th) (Max) @ id | 3.7V @ 5mA |
| Rds on (Max) @ id, vgs | 18mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 360 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 15000 pF @ 30 V |