TJ8S06M3L(T6L1,NQ) - Toshiba Semiconductor
MPNTJ8S06M3L(T6L1,NQ)
End of Life
MOSFET P-CH 60V 8A DPAK
$1.21Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Ta) |
| Power dissipation | 27W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +10V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3V @ 1mA |
| Rds on (Max) @ id, vgs | 104mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 890 pF @ 10 V |