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Toshiba Semiconductor TC75S103F,LF(CT — Memory (DRAM / SRAM / Flash / EEPROM)

Toshiba TC75S103F,LF(CT CMOS Op-Amp, 300 kHz GBW

MPNTC75S103F,LF(CT
End of Life

Toshiba TC75S103F,LF(CT CMOS op-amp, single circuit, 300 kHz gain bandwidth, 0.52 V/µs slew rate, rail-to-rail output, 1.8 V to 5.5 V supply, -40°C to 105°C, surface mount.

$0.44Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

TC75S103F,LF(CT Technical Specifications
ParameterValue
Output typeRail-to-Rail
Mounting typeSurface Mount
Amplifier typeCMOS
Voltage - input offset1.5 mV
Voltage - supply span5.5 V
Current - supply100µA
Current - input bias1 pA
Current - output (Channel)25 mA
Operating temperature-40°C ~ 105°C
Gain bandwidth product300 kHz
PackageTape & Reel (TR); Cut Tape (CT)
Slew rate0.52V/µs
Number of circuits1

Product details

300 kHz GBW CMOS op-amp for low-speed sensor conditioning

Input bias current is 1 pA, so high-impedance sources like pH probes or piezo sensors won't see significant loading.

Supply rails and output drive

The 1.8 V minimum supply lets this op-amp run directly from a single alkaline cell or a 1.8 V digital rail, while the 5.5 V maximum covers standard 5 V analog supplies. The 100 µA supply current keeps the power budget low in battery-operated designs — a 300 kHz GBW part drawing 100 µA is a reasonable trade-off between speed and quiescent draw.

Frequently asked questions

How does TC75S103F compare to the TC75S67TU,LF?

The TC75S67TU,LF is a higher-speed sibling with a 3.5 MHz gain-bandwidth product and 1 V/µs slew rate, versus the TC75S103F's 300 kHz and 0.52 V/µs. Choose the TC75S103F when power and cost matter more than bandwidth; pick the TC75S67 for faster signal paths like active filters above 100 kHz.