Toshiba Semiconductor SSM3J66MFV,L3F
MPNSSM3J66MFV,L3F
End of Life
MOSFET P-CH 20V 800MA VESM
$0.37Ref. price · indicative, final on quote
PackagingSOT-723
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 800mA (Ta) |
| Power dissipation | 150mW (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +6V, -8V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-723 |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 390mOhm @ 800mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 1.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 100 pF @ 10 V |