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Toshiba Semiconductor SSM3J168F,LXHF

Toshiba Semiconductor SSM3J168F,LXHF

MPNSSM3J168F,LXHF
End of Life

SMOS LOW RON VDS:-60V VGSS:+10/-

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PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

SSM3J168F,LXHF specifications
ParameterValue
SeriesU-MOSVI
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C400mA (Ta)
Power dissipation600mW (Ta)
Operating temperature150°C
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+10V, -20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs1.55Ohm @ 200mA, 10V
Gate charge (Qg) (Max) @ vgs3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds82 pF @ 10 V