Dual pre-biased NPN/PNP in a single SOT-363
The Toshiba RN4990(TE85L,F) packs one NPN and one PNP pre-biased transistor into a single 6-pin SOT-363 package, each with an integrated 4.7 kΩ base resistor. This dual complementary array replaces two discrete bias-resistor transistors (BRTs) and their external base resistors, saving board area in high-density designs. Collector current is rated to 100 mA per side, with a collector-emitter breakdown of 50 V — suitable for 5 V and 12 V logic-level interface and driver stages. The NPN side transitions at 250 MHz, the PNP at 200 MHz, adequate for switching up to the low-MHz range.
Saturation voltage is specified at 300 mV maximum with a 250 µA base drive into 5 mA collector current. That low drop keeps the output rail within a few hundred millivolts of ground when the transistor is fully on, which matters for driving relays, LEDs, or logic inputs where headroom is tight. The minimum DC current gain of 120 at 1 mA, 5 V means the base drive requirement stays modest — a 3.3 V GPIO can saturate the output with a series resistor in the low kilohm range.