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Toshiba Semiconductor RN4983FE,LXHF(CT — Memory (DRAM / SRAM / Flash / EEPROM)

RN4983FE,LXHF(CT Dual Pre-Biased Transistor, AEC-Q101, 50V

MPNRN4983FE,LXHF(CT
End of Life

Toshiba RN4983FE,LXHF(CT dual NPN/PNP pre-biased transistor, SOT-563, AEC-Q101, 50V VCEO, 100mA Ic, 22kΩ R1/R2, 250/200MHz fT.

$0.39Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

RN4983FE,LXHF(CT Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce70 @ 10mA, 5V
Power - max100mW
Frequency250MHz, 200MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)22kOhms
Resistor - emitter base (R2)22kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

AEC-Q101 dual pre-biased transistor in a hand-solderable SOT-563

The Toshiba RN4983FE,LXHF(CT packs one NPN and one PNP pre-biased transistor into a single SOT-563 package, saving board space and reducing component count compared to using two separate discretes. Each transistor includes integrated 22kΩ base and emitter-base resistors, so you can drive the base directly from a 3.3V or 5V logic output without external biasing components. The AEC-Q101 qualification means this part is validated for automotive under-hood and chassis-domain environments — think engine control modules, transmission controllers, or any 12V/24V vehicle system where temperature swings and vibration are the norm.

With a 50V collector-emitter breakdown and 100mA maximum collector current, this transistor handles the kind of low-side switching, level shifting, and inverter/buffer stages you find in automotive sensor interfaces, relay drivers, and solenoid pre-drivers. The 300mV saturation voltage at 250µA base current and 5mA collector current keeps conduction losses low in logic-level switching. The 500nA maximum collector cutoff is tight enough to avoid leakage issues in battery-powered modules during sleep mode.

Active lifecycle — no LTB worry for production builds

For dual-sourcing resilience, the pre-biased transistor family includes several pin-compatible options from other manufacturers — check the FAQ for a direct equivalent.

Frequently asked questions

Is RN4983FE AEC-Q101 qualified?

Yes, the RN4983FE is listed under the Automotive, AEC-Q101 series, meaning it meets the automotive-grade qualification for discrete semiconductors — validated for operation across the full automotive temperature range and against the reliability tests required for under-hood and chassis applications.