Skip to main content
Toshiba Semiconductor RN4906FE,LXHF(CT — Memory (DRAM / SRAM / Flash / EEPROM)

RN4906FE,LXHF(CT Dual Pre-Biased NPN/PNP Transistor

MPNRN4906FE,LXHF(CT
End of Life

Automotive, AEC-Q101 dual NPN/PNP pre-biased transistor, 50V Vce, 100mA Ic, 4.7kΩ base resistor, 47kΩ emitter-base resistor, SOT-563 package, ES6 supplier device package.

$0.39Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RN4906FE,LXHF(CT Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max100mW
Frequency200MHz, 250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)4.7kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

What this dual pre-biased transistor is for

The RN4906FE,LXHF(CT is an automotive-grade dual transistor from the AEC-Q101 series, integrating one NPN and one PNP pre-biased transistor in a single SOT-563 package. The built-in base resistor (R1) of 4.7 kΩ and emitter-base resistor (R2) of 47 kΩ eliminate two external resistors per channel, saving board space and reducing component count in switching and interface circuits. It is specified for surface-mount assembly and rated for a maximum power dissipation of 100 mW.

Key electrical ratings that decide the fit

The collector-emitter breakdown voltage is 50 V maximum, and the continuous collector current rating is 100 mA — suitable for driving low-power loads like relay coils, LED indicators, or logic-level interface transistors in 12 V automotive systems. The 300 mV Vce(sat) at 250 µA base current and 5 mA collector current keeps conduction losses low in saturated switching. DC current gain (hFE) is a minimum of 80 at 10 mA collector current and 5 V Vce, giving enough drive margin for typical microcontroller GPIO outputs. Off-state leakage is limited to 500 nA maximum.

Package and mounting for automotive PCBs

It is a surface-mount device intended for reflow soldering on standard FR-4 or automotive-grade PCB laminates. The compact 1.6 mm × 1.6 mm footprint suits space-constrained modules like engine control units, body controllers, or sensor interface boards where every square millimeter counts.

Frequently asked questions

Is RN4906FE AEC-Q101 qualified?

Yes, the RN4906FE is part of the Automotive, AEC-Q101 series, meaning it is qualified for automotive-grade reliability under the AEC-Q101 stress test standard for discrete semiconductors.

What are the base and emitter resistor values of RN4906FE?

The base resistor (R1) is 4.7 kΩ and the emitter-base resistor (R2) is 47 kΩ, integrated on-chip for both the NPN and PNP transistors.

What are the key electrical specs for RN4906FE (Vce, Ic, hFE)?

Key ratings: collector-emitter breakdown voltage 50 V max, continuous collector current 100 mA max, DC current gain (hFE) minimum 80 at 10 mA / 5 V, Vce(sat) 300 mV max at 250 µA / 5 mA.

Is RN4906FE a dual NPN/PNP transistor?

Yes, it integrates one NPN and one PNP pre-biased transistor in a single package, each with its own integrated bias resistors.