Dual pre-biased transistor in one SC-74 package
The Toshiba RN4609(TE85L,F) packs one NPN and one PNP pre-biased transistor into a single SC-74 (SOT-457) surface-mount package. Each transistor includes a 47 kΩ series base resistor and a 22 kΩ base-emitter resistor, eliminating the two external bias resistors normally needed per device. This cuts component count and board area in half for complementary switching stages, level shifters, and small-signal driver circuits.
50 V / 100 mA — what it handles
Collector-emitter breakdown is rated at 50 V, with a continuous collector current of 100 mA per transistor. The 300 mW total power dissipation limits current at higher voltages. The 200 MHz transition frequency keeps switching clean for PWM up to a few megahertz.
Saturation and gain at working currents
VCE(sat) is 300 mV maximum at 250 µA base drive into 5 mA collector current — a tight saturation that keeps on-state voltage drop low in switching applications. Collector cutoff leakage is 100 nA maximum, negligible for most designs.