The Toshiba RN2961(TE85L,F) is a dual PNP pre-biased transistor in a US6 package (6-TSSOP / SC-88 / SOT-363). Each transistor integrates a 4.7kΩ base resistor (R1) and a 4.7kΩ emitter-base resistor (R2), eliminating two external resistors per channel from the BOM. It is rated for 50 V collector-emitter breakdown, 100 mA continuous collector current, and 200 mW total power dissipation, with a transition frequency of 200 MHz. Typical applications include low-current switching, interface circuits, and inverter stages in industrial and consumer electronics where board space is tight.
The 200 mW total power dissipation is shared between the two PNP transistors. At 25°C ambient, each channel can handle roughly 100 mW if the other is off, but thermal derating applies above that. The 100 mA collector current is a maximum rating; practical switching loads should stay below 80 mA to maintain headroom for saturation voltage and gain. The 50 V VCEO breakdown covers 24 V and 48 V industrial rails with margin.
Pre-biased resistors simplify the BOM
The integrated 4.7kΩ base and emitter-base resistors set the base current for a given input voltage, so the transistor turns on when the input exceeds roughly 0.7 V plus the drop across R1. This eliminates two resistors per channel and shrinks the footprint versus a discrete PNP plus two 0402s.