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Toshiba Semiconductor RN2909,LXHF(CT — Discrete Semiconductors

RN2909,LXHF(CT Toshiba Dual PNP Pre-Biased, 50V 100mA

MPNRN2909,LXHF(CT
End of Life

Toshiba Semiconductor RN2909 series dual PNP pre-biased transistor, 50V Vce, 100mA Ic, 200mW, SOT-363 surface-mount, tape and reel.

$0.43Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RN2909,LXHF(CT specifications
ParameterValue
MountingSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce70 @ 10mA, 5V
Power - max200mW
Frequency200MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)47kOhms
Resistor - emitter base (R2)22kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Dual PNP pre-biased transistor — 50V, 100mA per channel

The RN2909,LXHF(CT from Toshiba Semiconductor packs two PNP pre-biased transistors in a single SOT-363 (US6) surface-mount package. Each channel is rated for 50V collector-emitter breakdown and 100mA continuous collector current, with a total package power dissipation of 200mW.

Switching performance and gain

With a transition frequency of 200MHz and a minimum DC current gain of 70 at 10mA collector current, the device handles moderate-speed switching in digital logic interfaces, relay drivers, and general-purpose load switching. The 300mV saturation voltage at 250µA base drive and 5mA collector current keeps conduction losses low in saturated switching. The 500nA maximum collector cutoff current ensures negligible leakage in off-state, important for battery-powered or low-power standby circuits.

Automotive-grade qualification and package options

Available in tape-and-reel or cut-tape formats, the SOT-363 footprint (also designated US6) is a standard 6-pin surface-mount package compatible with common pick-and-place assembly lines.

Frequently asked questions

What is the maximum power dissipation of the RN2909,LXHF(CT?

The total package power dissipation is rated at 200mW maximum. This is the combined limit for both transistor channels, and derating may apply at elevated ambient temperatures.