Dual PNP with built-in 22k/47k bias resistors
The Toshiba RN2908,LF(CT packs two PNP pre-biased transistors into a single SOT-363 (US6) package. Each transistor has a 50V collector-emitter breakdown and is rated for 100mA continuous collector current.
200mW in a SOT-363 — thermal budget matters
The maximum power dissipation is 200mW for the entire dual package. In a dense PCB layout or an environment with limited airflow, that 200mW ceiling is the binding constraint, not the 100mA per-transistor current rating. The scorch mark tells you if you push past that limit in a warm enclosure, the part will fail open on one or both channels.
Saturation and gain at 5mA
The Vce(sat) is specified at 300mV maximum with a 250µA base drive and 5mA collector load. Minimum DC current gain (hFE) is 80 at 10mA collector current and 5V Vce. These numbers tell you the transistor is designed for saturated switching at modest currents — think driving a relay coil, an LED string, or the base of a larger power transistor — not linear amplification.