Dual PNP pre-biased transistor in a SOT-563 footprint
The Toshiba RN2904FE,LF integrates two PNP transistors with 47kΩ base and emitter resistors in a single SOT-563 package, eliminating the need for external resistor pairs in switching and interface circuits. Each transistor handles up to 100mA collector current with a 50V VCEO breakdown, and the 200MHz fT supports moderate-speed switching up to a few megahertz. The 100mW power limit per package means derating is necessary if both transistors conduct simultaneously near the current maximum.
47kΩ bias resistors — one less resistor per channel
With R1 and R2 both at 47kΩ, the base current is set by the input voltage minus about 0.7V divided by 47kΩ. For a 5V logic input, base drive sits around 90µA, enough to saturate the transistor at 5mA collector current with a Vce(sat) of 300mV typical. The 47kΩ resistor pair is a common value for general-purpose load switching and level translation, and the integrated resistors cut two 0402 parts per channel from the BOM.
SOT-563 package — compact but thermally constrained
The SOT-563 (1.6mm x 1.6mm) houses both transistors in a single ES6 package. The 100mW total power limit means that at 5V VCE and 20mA IC, you're already at the dissipation ceiling for one transistor if the other is also active. This package is best suited for low-power signal switching, not continuous current drive. The surface-mount footprint requires no thermal pad — standard reflow profiles for lead-free solder apply.
Active production, ROHS3 compliant
For dual-sourcing, the RN1908(T5L,F,T) is a complementary NPN pair with the same 50V/100mA ratings and SOT-563 footprint, but with 22kΩ base and 47kΩ emitter resistors — a different bias ratio that may require input drive adjustment. The RN1702,LF offers 10kΩ/10kΩ resistors for higher base drive.