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Toshiba Semiconductor RN2901,LF(CT — Memory (DRAM / SRAM / Flash / EEPROM)
Toshiba Semiconductor

RN2901,LF(CT Dual PNP Pre-Biased Transistor, 200mW, SOT-363

MPNRN2901,LF(CT
End of Life

Toshiba RN2901,LF(CT — dual PNP pre-biased transistor array, 50V Vce, 100mA Ic, 200mW max power, 200MHz transition frequency, SOT-363 (US6) package, ROHS3 compliant.

$0.28Ref. price · indicative, final on quote
RN2901,LF(CT datasheet
Packaging6-TSSOP, SC-88, SOT-363
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

RN2901,LF(CT Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce30 @ 10mA, 5V
Power - max200mW
Frequency200MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)4.7kOhms
Resistor - emitter base (R2)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Product details

Dual PNP pre-biased transistor in a 6-pin SOT-363

The RN2901,LF(CT is a dual PNP pre-biased transistor array from Toshiba, integrating two PNP transistors each with built-in base (R1) and base-emitter (R2) resistors of 4.7kΩ. This eliminates the need for external bias resistors, saving board space and reducing component count in switching and driver circuits. The device is housed in a surface-mount SOT-363 package (also designated US6) and is rated for a maximum power dissipation of 200mW. Typical applications include relay drivers, lamp drivers, and logic-level interface stages where two independent PNP switching channels are needed.

Key ratings for the BOM decision

Collector-emitter breakdown voltage is 50V, with a maximum continuous collector current of 100mA per transistor. The DC current gain (hFE) is a minimum of 30 at 10mA collector current and 5V Vce — typical for a pre-biased PNP stage. Vce saturation is 300mV maximum at 250µA base current and 5mA collector current, which keeps conduction losses low in saturated switching. Transition frequency is 200MHz, adequate for general-purpose switching up to low-MHz ranges. Collector cutoff current is a maximum 500nA, so leakage is negligible in most designs.

Lifecycle and supply posture

It is ROHS3 compliant.

Frequently asked questions

What are the specifications of RN2901,LF(CT?

It is a dual PNP pre-biased transistor array with 50V Vce breakdown, 100mA maximum collector current, 200mW maximum power dissipation, 200MHz transition frequency, and integrated 4.7kΩ base and base-emitter resistors. Package is SOT-363 (US6).

Is RN2901 the same as RN2902?

The record does not include a direct comparison. Both are part of Toshiba's pre-biased transistor series; the key difference typically lies in the integrated resistor values. Verify the R1 and R2 values for each part against your design requirements.