Dual PNP pre-biased in SOT-553
The Toshiba RN2712JE(TE85L,F) is a dual PNP pre-biased transistor in an emitter-coupled configuration. It integrates two PNP transistors with a 22 kΩ base resistor on each side, eliminating the need for external bias resistors and saving board space in compact designs. The part is rated for a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, with a transition frequency of 200 MHz, making it suitable for signal switching, level shifting, and low-power inverter stages in portable or space-constrained equipment.
The 200 MHz fT is fast enough for most low-speed switching and signal conditioning, but not for high-frequency RF output stages. The 300 mV saturation voltage at 250 µA base current and 5 mA collector current is low enough to keep dissipation minimal in saturated switching applications.
Package and mounting
Housed in a 5-pin SOT-553 package (supplier device package ESV), this is a surface-mount part. The SOT-553 footprint is compact—roughly 1.6 mm × 1.6 mm—so it fits tightly packed PCBs.
Lifecycle and compliance
It is RoHS compliant, so no conflict with EU or similar regulatory requirements.