Toshiba Semiconductor RN2106,LF(CT
MPNRN2106,LF(CT
End of Life
TRANS PREBIAS PNP 50V 0.1A SSM
$0.2Ref. price · indicative, final on quote
PackagingSC-75, SOT-416
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | PNP - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 500nA |
| DC current gain (hFE) (Min) @ ic, vce | 80 @ 10mA, 5V |
| Power - max | 100 mW |
| Frequency - transition | 200 MHz |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SC-75, SOT-416 |
| Resistor - base (R1) | 4.7 kOhms |
| Resistor - emitter base (R2) | 47 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 250µA, 5mA |