RN2106,LF(CT

Toshiba Semiconductor

TRANS PREBIAS PNP 50V 0.1A SSM

Toshiba Semiconductor RN2106,LF(CT
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[IN STOCK] In Stock: 12 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RN2106,LF(CT specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max100 mW
Frequency - transition200 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-75, SOT-416
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA
RN2106,LF(CT
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