Toshiba Semiconductor RN1906FE,LF(CT
MPNRN1906FE,LF(CT
End of Life
TRANS 2NPN PREBIAS 0.1W ES6
$0.24Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | 2 NPN - Pre-Biased (Dual) |
| Voltage - collector emitter breakdown | 50V |
| Current - collector (Ic) | 100mA |
| Current - collector cutoff | 500nA |
| DC current gain (hFE) (Min) @ ic, vce | 80 @ 10mA, 5V |
| Power - max | 100mW |
| Frequency | 250MHz |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SOT-563, SOT-666 |
| Resistor - base (R1) | 4.7kOhms |
| Resistor - emitter base (R2) | 47kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 250µA, 5mA |