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Toshiba Semiconductor RN1703JE(TE85L,F)

Toshiba Semiconductor RN1703JE(TE85L,F)

MPNRN1703JE(TE85L,F)
End of Life

TRANS 2NPN PREBIAS 0.1W ESV

$0.28452Price · pay online now
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$0.28 / ea · total $0.56

2 in stock — maximum per order · MOQ 2 · 3–4 days lead time

$0.28 / ea from 5 pcs

PackagingSOT-553
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

RN1703JE(TE85L,F) specifications
ParameterValue
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 10mA, 5V
Power - max100mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-553
Resistor - base (R1)22kOhms
Resistor - emitter base (R2)22kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA