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Toshiba Semiconductor RN1610(TE85L,F) — DC-DC Power Modules

Toshiba Semiconductor RN1610(TE85L,F)

MPNRN1610(TE85L,F)
End of Life

TRANS 2NPN PREBIAS 0.3W SM6

$0.49Ref. price · indicative, final on quote
PackagingSC-74, SOT-457
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RN1610(TE85L,F) specifications
ParameterValue
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V
Power - max300mW
Frequency250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74, SOT-457
Resistor - base (R1)4.7kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA