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Toshiba Semiconductor RN1412TE85LF — DC-DC Power Modules

Toshiba Semiconductor RN1412TE85LF

MPNRN1412TE85LF
End of Life

TRANS PREBIAS NPN 50V 0.1A SMINI

$0.3Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RN1412TE85LF specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V
Power - max200 mW
Frequency250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA