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RN1410~6LF

Toshiba Semiconductor RN1410,LF

MPNRN1410,LF
End of Life

TRANS PREBIAS NPN 50V 0.1A SMINI

$0.2Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RN1410,LF specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V
Power - max200 mW
Frequency - transition250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA