Toshiba Semiconductor RN1117MFV,L3F
MPNRN1117MFV,L3F
End of Life
TRANS PREBIAS NPN 50V 0.1A VESM
$0.17Ref. price · indicative, final on quote
PackagingSOT-723
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 500nA |
| DC current gain (hFE) (Min) @ ic, vce | 30 @ 10mA, 5V |
| Power - max | 150 mW |
| Frequency | 250 MHz |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SOT-723 |
| Resistor - base (R1) | 10 kOhms |
| Resistor - emitter base (R2) | 4.7 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 5mA |