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Toshiba Semiconductor RN1116,LF(CT — DC-DC Power Modules

Toshiba Semiconductor RN1116,LF(CT

MPNRN1116,LF(CT
End of Life

TRANS PREBIAS NPN 50V 0.1A SSM

$0.2Ref. price · indicative, final on quote
PackagingSC-75, SOT-416
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RN1116,LF(CT specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce50 @ 10mA, 5V
Power - max100 mW
Frequency250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-75, SOT-416
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA