Toshiba Semiconductor RN1112(TE85L,F)
MPNRN1112(TE85L,F)
End of Life
TRANS PREBIAS NPN 50V 0.1A SSM
$0.22Ref. price · indicative, final on quote
PackagingSC-75, SOT-416
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 100nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 120 @ 1mA, 5V |
| Power - max | 100 mW |
| Frequency - transition | 250 MHz |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SC-75, SOT-416 |
| Resistor - base (R1) | 22 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 250µA, 5mA |