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Toshiba Semiconductor RN1111MFV,L3F — DC-DC Power Modules

Toshiba Semiconductor RN1111MFV,L3F

MPNRN1111MFV,L3F
End of Life

TRANS PREBIAS NPN 50V 0.1A VESM

$0.17Ref. price · indicative, final on quote
PackagingSOT-723
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RN1111MFV,L3F specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V
Power - max150 mW
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA