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Toshiba Semiconductor RN1105MFV,L3F(CT

Toshiba Semiconductor RN1105MFV,L3F(CT

MPNRN1105MFV,L3F(CT
End of Life

TRANS PREBIAS NPN 50V 0.1A VESM

$0.06408Price · pay online now
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$0.06 / ea · total $0.60

6,800 in stock — maximum per order · MOQ 10 · 3–4 days lead time

$0.05 / ea from 100 pcs

PackagingSOT-723
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

RN1105MFV,L3F(CT specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max150 mW
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 5mA