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Toshiba Semiconductor RN1101MFV,L3XHF(CT — DC-DC Power Modules

Toshiba Semiconductor RN1101MFV,L3XHF(CT

MPNRN1101MFV,L3XHF(CT
End of Life

TRANS PREBIAS NPN 50V 0.1A VESM

$0.33Ref. price · indicative, final on quote
PackagingSOT-723
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RN1101MFV,L3XHF(CT specifications
ParameterValue
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce30 @ 10mA, 5V
Power - max150 mW
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 5mA