MT3S111TU,LF
Toshiba Semiconductor
RF SIGE NPN BIPOLAR TRANSISTOR N
[IN STOCK] In Stock: 89 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 6V |
| Current - collector (Ic) | 100mA |
| DC current gain (hFE) (Min) @ ic, vce | 200 @ 30mA, 5V |
| Power - max | 800mW |
| Frequency - transition | 10GHz |
| Operating temperature | 150°C (TJ) |
| Gain | 12.5dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 3-SMD, Flat Lead |
| Noise figure (dB typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
MT3S111TU,LF
[ALLOC] verified