Toshiba Semiconductor MT3S111TU,LF
MPNMT3S111TU,LF
End of Life
RF SIGE NPN BIPOLAR TRANSISTOR N
$0.58Ref. price · indicative, final on quote
Packaging3-SMD, Flat Lead
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 6V |
| Current - collector (Ic) | 100mA |
| DC current gain (hFE) (Min) @ ic, vce | 200 @ 30mA, 5V |
| Power - max | 800mW |
| Frequency - transition | 10GHz |
| Operating temperature | 150°C (TJ) |
| Gain | 12.5dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 3-SMD, Flat Lead |
| Noise figure (dB typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |