Active production — 50V, 150mA emitter-coupled pair in SOT-553
The Toshiba HN4B01JE(TE85L,F) is an active-production NPN/PNP emitter-coupled transistor pair rated for 50V collector-emitter breakdown and 150mA continuous collector current, housed in a SOT-553 (ESV) surface-mount package.
Package and board-fit — SOT-553 (ESV)
The SOT-553 package (supplier device package ESV) is a 5-pin, ultra-small outline suitable for space-constrained PCBs where two transistors must share a common emitter node.
The 50V Vceo and 150mA Ic ceiling cover low-side switching of relays, LEDs, and small signal loads. The 250mV Vce(sat) at 10mA base, 100mA collector ensures low on-state voltage drop in saturated switching. The 100nA maximum collector cutoff current (ICBO) keeps leakage negligible in battery-powered or high-impedance circuits. Operating junction temperature up to 150°C allows use in warm enclosures without derating.